FDMC86324 Description
This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
FDMC86324 Key Features
- Max RDS(on) = 23 mW at VGS = 10 V, ID = 7 A
- Max RDS(on) = 37 mW at VGS = 6 V, ID = 4 A
- Low Profile
- 1 mm Max in Power 33
- 100% UIL Tested
- Pb-Free, Halide Free and RoHS pliant