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FDMC8878
N-Channel POWERTRENCH) MOSFET
30 V, 16.5 A, 14 mW
This N−Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications.
Features
• RDS(on) = 14 mW (Max.) @ VGS = 10 V, ID = 9.6 A • RDS(on) = 17 mW (Max.) @ VGS = 4.5 V, ID = 8.7 A • Low Profile − 0.8 mm Max in MLP 3.3 x 3.3 • These Devices are Pb−Free and are RoHS Compliant
Application
• DC − DC Conversion
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDS
Gate−to−Source Voltage
VGS
Continuous Drain Current
TC = 25°C
ID
(Package limited)
30
V
±20
V
16.5 A
TC = 25°C
38
(Silicon limited)
TA = 25°C
9.
FDMC8878 Datasheet
