Click to expand full text
MOSFET – Dual N-Channel, POWERTRENCH)
60 V, 8.2 A, 17 mW
FDMC89521L
General Description This device includes two 60 V N−Channel MOSFETs in a dual
Power 33 (3 mm x 3 mm MLP) package. The package is enhanced for exceptional thermal performance.
Features
• Max rDS(on) = 17 mW at VGS = 10 V, ID = 8.2 A • Max rDS(on) = 27 mW at VGS = 4.5 V, ID = 6.7 A • Termination is Lead−free • These Devices are RoHS Compliant
Applications
• Battery Protection • Load Switching • Bridge Topologies
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Units
VDS Drain to Source Voltage
60
V
VGS Gate to Source Voltage
±20
V
ID Drain Current
A
− Continuous
TA = 25°C
(Note 1a)
8.
FDMC89521L Datasheet
