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FDMD8430 Datasheet Dual N-channel Power MOSFET

Manufacturer: onsemi

Overview: FDMD8430 Dual N-Channel PowerTrench) MOSFET 30 V, 28 A, 2.12.

General Description

This package integrates two N−Channel devices connected internally in mon−source configuration.

This enables very low package parasitics and optimized thermal path to the mon source pad on the bottom.

Provides a very small footprint (3.3 x 5 mm) for higher power density.

Key Features

  • Max rDS(on) = 2.12 mW at VGS = 10 V, ID = 28 A.
  • Max rDS(on) = 2.95 mW at VGS = 4.5 V, ID = 24 A.
  • Ideal for Flexible Layout in Secondary Side Synchronous Rectification.
  • 100% UIL Tested.
  • Termination is Lead.
  • free and RoHS Compliant.

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