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MOSFET – Complementary, POWERTRENCH)
N-Channel: 20 V, 3.8 A, 66 mW P-Channel: -20 V, -2.6 A, 142 mW
FDME1034CZT
General Description This device is designed specifically as a single package solution for
a DC−DC ‘Switching’ MOSFET in cellular handset and other ultra−portable applications. It features an independent N−Channel & P−Channel MOSFET with low on−state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device.
The MicroFETt 1.6x1.6 Thin package offers exceptional thermal performance for it’s physical size and is well suited to switching and linear mode applications.
Features Q1: N−Channel
Max RDS(on) = 66 mW at VGS = 4.5 V, ID = 3.4 A Max RDS(on) = 86 mW at VGS = 2.
FDME1034CZT Datasheet
