FDMF2011 Datasheet | onsemi

Description The FDMF2011 is a pact 100 V Smart Power Stage (SPS) module that is a fully optimized for use in high current switching applications. The FDMF2011 module integrates a driver IC plus two N- channel Power MOSFETs into a thermally enhanced, 6.0 mm x 7.5 mm PQFN package. The PQFN packaging provides very low package inductance and resistance improving the current handling capability and performance of the part. With an integrated approach, the plete switching power stage is optimized with regards to driver and MOSFET dynamic performance, system parasitic inductance, and Power MOSFET RDS(ON). The FDMF2011 uses onsemi’s high performance POWERTRENCH® MOSFET technology, which reduces high voltage and current stresses in switching applications. The driver IC features a low delay times and matched PWM input propagation delays, which further enhance the performance of the part. Features - pact Size - 6.0 mm x 7.5 mm PQFN - High Current Handling: 20 A - Next Generation 100 V Power MOSFETs: - Typ. RDS(ON) = 7.7 (HS) / 7.3 (LS) m W at VGS = 10 V, ID = 20 A - Wide Driver Power Supply Voltage Range: 10 V to 20 V - Internal Pull- down Resistors for PWM Inputs (HI, LI) - Short PWM Propagation Delays - Under- voltage Lockout (UVLO) - Fully Optimized System Efficiency - High Performance Low Profile Package - Integrated 100 V Half- Bridge Gate Driver - onsemi 100 V POWERTRENCH MOSFETs for Clean Switching Waveforms and Reduced Ringing - Low Inductance and Low Resistance Packaging for Minimal Operating Power Losses - onsemi Green Packaging and Ro HS pliant - Reduced EMI due to Low Side Flip- chip MOSFET Applications - Motor Drives (Power Tools & Drowns etc.) - Tele Half / Full - Bridge DC- DC Converters - Buck- Boost Converters - High- current DC- DC Point of Load (POL) Converters PQFN36 6X7.5, 0.5P CASE 483BB MARKING DIAGRAM $Y&Z&3&K FDMF 2011 $Y &Z &3 &K FDMF2011 = Logo = Assembly Plant Code = 3- Digit Date Code Format = 2- Digits Lot Run Traceability Code = Device Code ORDERING...