FDMS037N08B
Description
This N-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on-state resistance and while maintaining superior switching performance.
Key Features
- RDS(on) = 3.01 mW (Typ.) @ VGS = 10 V, ID = 50 A
- Low FOM RDS(on)*QG
- Low Reverse Recovery Charge, Qrr = 80 nC
- Soft Reverse Recovery Body Diode
- Enables Highly Efficiency in Synchronous Rectification
- Fast Switching Speed
- 100% UIL Tested
- These Device is Pb-Free and RoHS compliant
