FDMS1D2N03DSD - Dual N-Channel MOSFETs

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDMS1D2N03DSD
Manufacturer	ON Semiconductor
File Size	505.46 KB
Description	Dual N-Channel MOSFETs
Datasheet	FDMS1D2N03DSD Datasheet
Additional preview pages of the FDMS1D2N03DSD datasheet.

Product details

Description

This device includes two specialized N-Channel MOSFETs in a dual package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.The control MOSFET (Q1) and synchronous SyncFETt (Q2) have been designed to provide optimal power efficiency.

Features

Q1: N-Channel.
Max RDS(on) = 3.25 mW at VGS = 10 V, ID = 19 A.
Max RDS(on) = 4 mW at VGS = 4.5 V, ID = 17 A Q2: N-Channel.
Max RDS(on) = 0.97 mW at VGS = 10 V, ID = 37 A.
Max RDS(on) = 1.25 mW at VGS = 4.5 V, ID = 34 A.
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.
RoHS Compliant Applicat.

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Published: Jul 4, 2024 |