Datasheet4U Logo Datasheet4U.com

FDMS3602S - 25V Asymmetric Dual N-Channel MOSFET

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A.
  • Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel.
  • Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A.
  • Max rDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A.
  • Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
  • RoHS Compliant This devic.

📥 Download Datasheet

Datasheet Details

Part number FDMS3602S
Manufacturer onsemi
File Size 1.96 MB
Description 25V Asymmetric Dual N-Channel MOSFET
Datasheet download datasheet FDMS3602S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMS3602S MOSFET Fairchild Semiconductor
FDMS3602AS MOSFET Fairchild Semiconductor
FDMS3600AS MOSFET Fairchild Semiconductor
FDMS3600S MOSFET Fairchild Semiconductor
FDMS3604AS MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDMS3604S N-Channel MOSFET
FDMS3606AS Asymmetric Dual N-Channel MOSFET
FDMS3660S Asymmetric Dual N-Channel MOSFET
FDMS3662 N-Channel MOSFET
FDMS3664S Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMS3602S PowerTrench® Power Stage FDMS3602S PowerTrench® Power Stage 25 V Asymmetric Dual N-Channel MOSFET General Description Features Q1: N-Channel „ Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel „ Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A „ Max rDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.