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FDMS3604S - N-Channel MOSFET

General Description

This device includes two specialized N

dual PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

Key Features

  • Q1: N.
  • Channel.
  • Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A.
  • Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N.
  • Channel.
  • Max rDS(on) = 2.6 mW at VGS = 10 V, ID = 23 A.
  • Max rDS(on) = 3.5 mW at VGS = 4.5 V, ID = 21 A.
  • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
  • MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.
  • This Device i.

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Datasheet Details

Part number FDMS3604S
Manufacturer onsemi
File Size 838.17 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS3604S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS3604S MOSFET – N-Channel, POWERTRENCH), Power Stage, Asymetric Dual General Description This device includes two specialized N−Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency. Features Q1: N−Channel • Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A • Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N−Channel • Max rDS(on) = 2.6 mW at VGS = 10 V, ID = 23 A • Max rDS(on) = 3.5 mW at VGS = 4.