FDMS3604S - N-Channel MOSFET

Product Overview

ON Semiconductor

Part number	FDMS3604S
Manufacturer	ON Semiconductor
File Size	838.17 KB
Description	N-Channel MOSFET
Datasheet	FDMS3604S Datasheet
Additional preview pages of the FDMS3604S datasheet.

This device includes two specialized N

dual PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

Q1: N.
Channel.
Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A.
Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N.
Channel.
Max rDS(on) = 2.6 mW at VGS = 10 V, ID = 23 A.
Max rDS(on) = 3.5 mW at VGS = 4.5 V, ID = 21 A.
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.
This Device i.

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Published: Dec 12, 2021 |