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FDMS3664S - Dual N-Channel MOSFET

General Description

This device includes two specialized N

in a dual PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

Key Features

  • Q1: N.
  • Channel.
  • Max RDS(on) = 8 mW at VGS = 10 V, ID = 13 A.
  • Max RDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N.
  • Channel.
  • Max RDS(on) = 2.6 mW at VGS = 10 V, ID = 25 A.
  • Max RDS(on) = 3.2 mW at VGS = 4.5 V, ID = 22 A.
  • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
  • MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.
  • This Device i.

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Datasheet Details

Part number FDMS3664S
Manufacturer onsemi
File Size 974.93 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDMS3664S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Dual, N-Channel, Asymmetric, POWERTRENCH), Power Stage FDMS3664S General Description This device includes two specialized N−Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETt (Q2) have been designed to provide optimal power efficiency. Features Q1: N−Channel • Max RDS(on) = 8 mW at VGS = 10 V, ID = 13 A • Max RDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N−Channel • Max RDS(on) = 2.6 mW at VGS = 10 V, ID = 25 A • Max RDS(on) = 3.2 mW at VGS = 4.