FDMS3664S - Dual N-Channel MOSFET

Product Overview

ON Semiconductor

Part number	FDMS3664S
Manufacturer	ON Semiconductor
File Size	974.93 KB
Description	Dual N-Channel MOSFET
Datasheet	FDMS3664S Datasheet
Additional preview pages of the FDMS3664S datasheet.

This device includes two specialized N

in a dual PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

Q1: N.
Channel.
Max RDS(on) = 8 mW at VGS = 10 V, ID = 13 A.
Max RDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N.
Channel.
Max RDS(on) = 2.6 mW at VGS = 10 V, ID = 25 A.
Max RDS(on) = 3.2 mW at VGS = 4.5 V, ID = 22 A.
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.
This Device i.

📁 Similar Datasheet

Other Datasheets by ON Semiconductor

Published: Dec 20, 2023 |