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FDMS6681Z - P-Channel MOSFET

Datasheet Summary

Description

switch applications.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.

Features

  • Max rDS(on) = 3.2 mW at VGS =.
  • 10 V, ID =.
  • 21.1 A.
  • Max rDS(on) = 5.0 mW at VGS =.
  • 4.5 V, ID =.
  • 15.7 A.
  • Advanced Package and Silicon Combination for Low rDS(on).
  • HBM ESD Protection Level of 8 kV Typical (Note 3).
  • MSL1 Robust Package Design.
  • RoHS Compliant.

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Datasheet preview – FDMS6681Z

Datasheet Details

Part number FDMS6681Z
Manufacturer ON Semiconductor
File Size 374.82 KB
Description P-Channel MOSFET
Datasheet download datasheet FDMS6681Z Datasheet
Additional preview pages of the FDMS6681Z datasheet.

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Full PDF Text Transcription

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FDMS6681Z MOSFET – POWERTRENCH), P-Channel -30 V, -122 A, 3.2 mW General Description The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection. Features • Max rDS(on) = 3.2 mW at VGS = −10 V, ID = −21.1 A • Max rDS(on) = 5.0 mW at VGS = −4.5 V, ID = −15.
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