FDMS6681Z - P-Channel MOSFET

onsemi

General Description

switch applications.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.

Key Features

Max rDS(on) = 3.2 mW at VGS =.
10 V, ID =.
21.1 A.
Max rDS(on) = 5.0 mW at VGS =.
4.5 V, ID =.
15.7 A.
Advanced Package and Silicon Combination for Low rDS(on).
HBM ESD Protection Level of 8 kV Typical (Note 3).
MSL1 Robust Package Design.
RoHS Compliant.

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FDMS6681Z p-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMS6681Z
Manufacturer	onsemi
File Size	374.82 KB
Description	P-Channel MOSFET
Datasheet	FDMS6681Z Datasheet

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Full PDF Text Transcription (Reference)

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FDMS6681Z MOSFET – POWERTRENCH), P-Channel -30 V, -122 A, 3.2 mW General Description The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection. Features • Max rDS(on) = 3.2 mW at VGS = −10 V, ID = −21.1 A • Max rDS(on) = 5.0 mW at VGS = −4.5 V, ID = −15.