Datasheet4U Logo Datasheet4U.com

FDMS7694 - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diod

Key Features

  • Max rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 13.2 A.
  • Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10.5 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • Next generation enhanced body diode technology, engineered for soft recovery.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant General.

📥 Download Datasheet

Datasheet Details

Part number FDMS7694
Manufacturer onsemi
File Size 330.42 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS7694 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMS7694 MOSFET Fairchild Semiconductor
FDMS7692 N-Channel MOSFET Fairchild Semiconductor
FDMS7692A N-Channel MOSFET Fairchild Semiconductor
FDMS7698 N-Channel PowerTrench MOSFET Fairchild Semiconductor
FDMS7600AS Dual N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDMS7620S Dual N-Channel MOSFET
FDMS7650DC N-Channel MOSFET
FDMS7658AS N-Channel MOSFET
FDMS003N08C N-Channel MOSFET
FDMS007N08LC N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMS7694 N-Channel PowerTrench® MOSFET FDMS7694 N-Channel PowerTrench® MOSFET 30 V, 9.5 mΩ Features „ Max rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 13.2 A „ Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10.5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.