FDMS8460
Description
This N- Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH® process that has been especially tailored to minimize the on- state resistance and yet maintain superior switching performance.
Features
- Max r DS(on) = 2.2 m W at VGS = 10 V, ID = 25 A
- Max r DS(on) = 3.0 m W at VGS = 4.5 V, ID = 21.7 A
- Advanced Package and Silicon bination for low r DS(on)
- MSL1 robust package design
- 100% UIL tested
- Ro HS pliant
Applications
- DC- DC Conversion
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
±20
Drain Current:
- Continuous (Package limited) TC = 25°C
- Continuous (Silicon limited) TC = 25°C
- Continuous TA = 25°C (Note 1a)
- Pulsed
EAS Single Pulse Avalanche Energy (Note 3)
864 m J
Power Dissipation:
TC = 25°C
TA = 25°C (Note 1a)
W 104 2.5
TJ, TSTG Operating and Storage Junction Tempera-
- 55...
