Datasheet Details
| Part number | FDMS8460 |
|---|---|
| Manufacturer | onsemi |
| File Size | 492.42 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDMS8460 Datasheet
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General Description
This N
Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH® process that has been especially tailored to minimize the on
state resistance and yet maintain superior switching performance.
Key Features
- Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 25 A.
- Max rDS(on) = 3.0 mW at VGS = 4.5 V, ID = 21.7 A.
- Advanced Package and Silicon combination for low rDS(on).
- MSL1 robust package design.
- 100% UIL tested.
- RoHS Compliant.