Datasheet4U Logo Datasheet4U.com

FDMS86263P - P-Channel MOSFET

General Description

This P

POWERTRENCH technology.

state resistance and optimized for superior switching performance.

Key Features

  • Max rDS(on) = 53 mW at VGS =.
  • 10 V, ID =.
  • 4.4 A.
  • Max rDS(on) = 64 mW at VGS =.
  • 6 V, ID =.
  • 4 A.
  • Very Low Rds.
  • on in Mid.
  • Voltage P.
  • Channel Silicon Technology Optimized for Low Qg.
  • This Product is Optimised for Fast Switching.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMS86263P MOSFET Fairchild Semiconductor
FDMS86200 N-Channel MOSFET Fairchild Semiconductor
FDMS86200DC MOSFET Fairchild Semiconductor
FDMS86201 N-Channel MOSFET Fairchild Semiconductor
FDMS86202 MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDMS86200 N-Channel MOSFET
FDMS86200DC N-Channel MOSFET
FDMS86255 N-Channel MOSFET
FDMS86101 N-Channel MOSFET
FDMS86101DC N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – P-Channel, POWERTRENCH) -150 V, -22 A, 53 mW FDMS86263P General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance. Features • Max rDS(on) = 53 mW at VGS = −10 V, ID = −4.4 A • Max rDS(on) = 64 mW at VGS = −6 V, ID = −4 A • Very Low Rds−on in Mid−Voltage P−Channel Silicon Technology Optimized for Low Qg • This Product is Optimised for Fast Switching Applications as Well as Load Switch Applications • 100% Uil Tested • This Device is Pb−Free and is RoHS Compliant Applications • Active Clamp Switch • Load Switch DATA SHEET www.onsemi.