FDMS86263P
Description
This P-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology.
Key Features
- Max rDS(on) = 53 mW at VGS = -10 V, ID = -4.4 A
- Max rDS(on) = 64 mW at VGS = -6 V, ID = -4 A
- Very Low Rds-on in Mid-Voltage P-Channel Silicon Technology Optimized for Low Qg
- This Product is Optimised for Fast Switching Applications as Well as Load Switch Applications
- 100% Uil Tested
- This Device is Pb-Free and is RoHS pliant
