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FDMS8D8N15C - N-Channel MOSFET

General Description

advanced POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance with best in class soft body diode.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 8.8 mW at VGS = 10 V, ID = 45 A.
  • Max rDS(on) = 9.4 mW at VGS = 8 V, ID = 22.5 A.
  • Low Qrr, Soft Recovery Body Diode.
  • Lowers Switching Noise/EMI.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N‐Channel Shielded Gate POWERTRENCH) 150 V, 85 A, 8.8 mW FDMS8D8N15C General Description This N-Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features • Shielded Gate MOSFET Technology • Max rDS(on) = 8.8 mW at VGS = 10 V, ID = 45 A • Max rDS(on) = 9.4 mW at VGS = 8 V, ID = 22.