FDMS8D8N15C Description
This N-Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode.
FDMS8D8N15C Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 8.8 mW at VGS = 10 V, ID = 45 A
- Max rDS(on) = 9.4 mW at VGS = 8 V, ID = 22.5 A
- Low Qrr, Soft Recovery Body Diode
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- These Devices are Pb-Free and are RoHS pliant