Datasheet Summary
- N-Channel PowerTrench® MOSFET
N-Channel PowerTrench® MOSFET
80 V, 120 A, 5.3 mΩ
Features
- RDS(on) = 4.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A
- Low FOM RDS(on)
- QG
- Low Reverse-Recovery Charge, Qrr = 62.5 nC
- Soft Reverse-Recovery Body Diode
- Enables High Efficiency in Synchronous Rectification
- Fast Switching Speed
- 100% UIL Tested
- RoHS pliant
Description
This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been tai-lored to minimize the on-state resistance while maintaining superior switching performance.
Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit
-...
