Datasheet Details
| Part number | FDP053N08B |
|---|---|
| Manufacturer | onsemi |
| File Size | 1.69 MB |
| Description | N-Channel MOSFET |
| Datasheet | FDP053N08B-ONSemiconductor.pdf |
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Overview: FDP053N08B — N-Channel PowerTrench® MOSFET FDP053N08B N-Channel PowerTrench® MOSFET 80 V, 120 A, 5.
| Part number | FDP053N08B |
|---|---|
| Manufacturer | onsemi |
| File Size | 1.69 MB |
| Description | N-Channel MOSFET |
| Datasheet | FDP053N08B-ONSemiconductor.pdf |
|
|
|
This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been tai-lored to minimize the on-state resistance while maintaining superior switching performance.
Applications • Synchronous Rectification for ATX / Server / Tele PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S Symbol Parameter VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds * Package limitation current is 75A.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| FDP053N08B | N-Channel MOSFET | Fairchild Semiconductor | |
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