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FDP20N50F - N-Channel MOSFET

Download the FDP20N50F datasheet PDF. This datasheet also covers the FDPF20N50FT variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 210 mW (Typ. ) @ VGS = 10 V, ID = 10 A.
  • Low Gate Charge (Typ. 50 nC).
  • Low Crss (Typ. 27 pF).
  • 100% Avalanche Tested.
  • Improve dv/dt Capability.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDPF20N50FT-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FDP20N50F
Manufacturer onsemi
File Size 456.85 KB
Description N-Channel MOSFET
Datasheet download datasheet FDP20N50F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, UniFETt, FRFET) 500 V, 20 A, 260 mW FDP20N50F / FDPF20N50FT Description UniFET MOSFET is onsemi's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET MOSFET has been enhanced by lifetime control. Its trr is less than 100 ns and the reverse dv/dt immunity is 15 V/ns while normal planar MOSFET's have over 200 ns and 4.5 V/ns respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant.