Datasheet Details
| Part number | FDP2D9N12C |
|---|---|
| Manufacturer | onsemi |
| File Size | 300.58 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDP2D9N12C Datasheet
|
|
|
Key Features
- Shielded Gate MOSFET Technology.
- Max RDS(on) = 2.95 mW at VGS = 10 V, ID = 181 A.
- 50% Lower Qrr than Other MOSFET Suppliers.
- Lowers Switching Noise/EMI.
- 100% UIL Tested.
- These Devices are Pb.
- Free, Halogen.
- Free and are RoHS Compliant Typical.