FDP2D9N12C
Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 2.95 m W at VGS = 10 V, ID = 181 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- 100% UIL Tested
- These Devices are Pb- Free, Halogen- Free and are Ro HS pliant
Typical Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Motor Drives and Uninterruptible Power Supplies
- Micro Solar Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
±20
Continuous Drain
Current Rq JC (Note 2) Steady
Power Dissipation
State
TC = 25°C
Rq JC (Note 2)
179 W
Continuous Drain Current Rq JA (Notes 1, 2)
Power Dissipation Rq JA (Notes 1, 2)
Steady State
TA = 25°C
19.5 A
Pulsed Drain Current TA = 25°C, tp = 10...
