FDP4D5N10C Overview
This N−Channel MV MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology. This Process has been Optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode. TO−220 CASE 221A TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT D.
FDP4D5N10C Key Features
- Max RDS(on) = 4.5 mW at VGS = 10 V, ID = 100 A
- Extremely Low Reverse Recovery Charge, Qrr
- 100% UIL Tested
- This Device is Pb-Free Halide, Free and RoHS pliant
FDP4D5N10C Applications
- Synchronous Rectification for ATX / Server / Tele PSU
