FDP4D5N10C Datasheet PDF - ON Semiconductor N-Channel MOSFET Specs

FDP4D5N10C - N-Channel MOSFET

Datasheet Summary

Description

This N

advanced PowerTrench process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

Max RDS(on) = 4.5 mW at VGS = 10 V, ID = 100 A.
Extremely Low Reverse Recovery Charge, Qrr.
100% UIL Tested.
This Device is Pb.
Free Halide, Free and RoHS Compliant.

Datasheet Details

Part number	FDP4D5N10C
Manufacturer	ON Semiconductor
File Size	429.70 KB
Description	N-Channel MOSFET
Datasheet	FDP4D5N10C Datasheet
Additional preview pages of the FDP4D5N10C datasheet.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com MOSFET – N-Channel, Shielded Gate POWERTRENCH) 100 V, 128 A, 4.5 mW GDS GDS FDP4D5N10C, FDPF4D5N10C Description This N−Channel MV MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology. This Process has been Optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode. TO−220 CASE 221A TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT D G Features • Max RDS(on) = 4.5 mW at VGS = 10 V, ID = 100 A • Extremely Low Reverse Recovery Charge, Qrr • 100% UIL Tested • This Device is Pb−Free Halide, Free and RoHS Compliant.

Published: Oct 5, 2020 |