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FDP4D5N10C - N-Channel MOSFET

General Description

This N

advanced PowerTrench process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance with best in class soft body diode.

Key Features

  • Max RDS(on) = 4.5 mW at VGS = 10 V, ID = 100 A.
  • Extremely Low Reverse Recovery Charge, Qrr.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free Halide, Free and RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com MOSFET – N-Channel, Shielded Gate POWERTRENCH) 100 V, 128 A, 4.5 mW GDS GDS FDP4D5N10C, FDPF4D5N10C Description This N−Channel MV MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology. This Process has been Optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode. TO−220 CASE 221A TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT D G Features • Max RDS(on) = 4.5 mW at VGS = 10 V, ID = 100 A • Extremely Low Reverse Recovery Charge, Qrr • 100% UIL Tested • This Device is Pb−Free Halide, Free and RoHS Compliant.