FDP51N25 - N-Channel MOSFET

onsemi

General Description

on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

RDS(on) = 48 mW (Typ. ) @ VGS = 10 V, ID = 25.5 A.
Low Gate Charge (Typ. 55 nC).
Low Crss (Typ. 63 pF).

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FDP51N25 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDP51N25
Manufacturer	onsemi
File Size	496.79 KB
Description	N-Channel MOSFET
Datasheet	FDP51N25 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, UNIFETE 250 V, 51 A, 60 mW FDP51N25, FDPF51N25 Description UniFET MOSFET is onsemi’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features • RDS(on) = 48 mW (Typ.) @ VGS = 10 V, ID = 25.5 A • Low Gate Charge (Typ. 55 nC) • Low Crss (Typ. 63 pF) Applications • PDP TV • Lighting • Uninterruptible Power Supply • AC−DC Power Supply DATA SHEET www.onsemi.