Datasheet4U Logo Datasheet4U.com

FDP52N20 - N-Channel MOSFET

General Description

family based on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 41 mW (Typ. ) @ VGS = 10 V, ID = 26 A.
  • Low Gate Charge (Typ. 49 nC).
  • Low CRSS (Typ. 66 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number FDP52N20
Manufacturer onsemi
File Size 402.90 KB
Description N-Channel MOSFET
Datasheet download datasheet FDP52N20 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDP52N20 N‐Channel UniFET MOSFET 200 V, 52 A, 49 mW Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features • RDS(on) = 41 mW (Typ.) @ VGS = 10 V, ID = 26 A • Low Gate Charge (Typ. 49 nC) • Low CRSS (Typ. 66 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • PDP TV • Lighting • Uninterruptible Power Supply • AC−DC Power Supply www.onsemi.