Datasheet4U Logo Datasheet4U.com

FDP8D5N10C - N-Channel MOSFET

General Description

This N

advanced POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance with best in class soft body diode.

Key Features

  • Max RDS(on) = 8.5 mW at VGS = 10 V, ID = 76 A.
  • Extremely Low Reverse Recovery Charge, Qrr.
  • 100% UIL Tested.
  • RoHS Compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDP8D5N10C N-Channel MOSFET INCHANGE
FDP8030L N-Channel MOSFET Fairchild Semiconductor
FDP80N06 N-Channel MOSFET Fairchild Semiconductor
FDP8440 N-Channel MOSFET Fairchild Semiconductor
FDP8441 N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDP8030L N-Channel MOSFET
FDP8442-F085 N-Channel MOSFET
FDP8443-F085 N-Channel MOSFET
FDP8870-F085 N-Channel Power MOSFET
FDP8874 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 76 A, 8.5 mW FDP8D5N10C, FDPF8D5N10C General Description This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features • Max RDS(on) = 8.5 mW at VGS = 10 V, ID = 76 A • Extremely Low Reverse Recovery Charge, Qrr • 100% UIL Tested • RoHS Compliant Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter DATA SHEET www.onsemi.com VDS RDS(ON) MAX ID MAX 100 V 8.