FDP8D5N10C Description
This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode.
FDP8D5N10C Key Features
- Max RDS(on) = 8.5 mW at VGS = 10 V, ID = 76 A
- Extremely Low Reverse Recovery Charge, Qrr
- 100% UIL Tested
- RoHS pliant
FDP8D5N10C Applications
- Synchronous Rectification for ATX / Server / Tele PSU