FDP8D5N10C Datasheet PDF - ON Semiconductor N-Channel MOSFET Specs

FDP8D5N10C - N-Channel MOSFET

Datasheet Summary

Description

This N

advanced POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

Max RDS(on) = 8.5 mW at VGS = 10 V, ID = 76 A.
Extremely Low Reverse Recovery Charge, Qrr.
100% UIL Tested.
RoHS Compliant.

Datasheet Details

Part number	FDP8D5N10C
Manufacturer	ON Semiconductor
File Size	410.90 KB
Description	N-Channel MOSFET
Datasheet	FDP8D5N10C Datasheet
Additional preview pages of the FDP8D5N10C datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 76 A, 8.5 mW FDP8D5N10C, FDPF8D5N10C General Description This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features • Max RDS(on) = 8.5 mW at VGS = 10 V, ID = 76 A • Extremely Low Reverse Recovery Charge, Qrr • 100% UIL Tested • RoHS Compliant Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter DATA SHEET www.onsemi.com VDS RDS(ON) MAX ID MAX 100 V 8.

Published: Oct 27, 2020 |