Datasheet Summary
MOSFET
- N-Channel, Shielded Gate, POWERTRENCH)
100 V, 76 A, 8.5 mW
FDP8D5N10C, FDPF8D5N10C
General Description This N- Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on- state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
- Max RDS(on) = 8.5 mW at VGS = 10 V, ID = 76 A
- Extremely Low Reverse Recovery Charge, Qrr
- 100% UIL Tested
- RoHS pliant
Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Motor Drives and Uninterruptible Power Supplies
- Micro Solar Inverter
DATA SHEET...
