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FDPF035N06B Datasheet N-channel Power MOSFET

Manufacturer: onsemi

Overview: FDPF035N06B — N-Channel PowerTrench® MOSFET FDPF035N06B N-Channel PowerTrench® MOSFET 60 V, 88 A, 3.

General Description

This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Renewable System D GDS G TO-220F S Absolute Maximum Ratings TC = 25oC unless otherwise noted.

Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds FDPF035N06B-F152 60 ±20 88 62 352 600 6.0 46.3 0.31 -55 to +175 300 Unit V V A A mJ V/ns W W/oC oC oC Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max.

Key Features

  • RDS(on) = 2.91 mΩ ( Typ. ) @ VGS = 10 V, ID = 88 A.
  • Low FOM RDS(on).
  • QG.
  • Low Reverse Recovery Charge, Qrr.
  • Soft Reverse Recovery Body Diode.
  • Enables Highly Efficiency in Synchronous Rectification.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • RoHS Compliant.

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