FDPF2D3N10C Description
This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode.
FDPF2D3N10C Key Features
- Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 100 A
- Extremely Low Reverse Recovery Charge, Qrr
- 100% UIL Tested
- RoHS pliant
FDPF2D3N10C Applications
- Synchronous Rectification for ATX / Server / Tele PSU