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FDPF2D3N10C - N-Channel MOSFET

Download the FDPF2D3N10C datasheet PDF. This datasheet also covers the FDP2D3N10C variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N

advanced POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance with best in class soft body diode.

Key Features

  • Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 100 A.
  • Extremely Low Reverse Recovery Charge, Qrr.
  • 100% UIL Tested.
  • RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDP2D3N10C-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by onsemi

Part Number Description
FDPF20N50 N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, Shielded Gate POWERTRENCH) 100 V, 222 A, 2.3 mW FDP2D3N10C, FDPF2D3N10C General Description This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features • Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 100 A • Extremely Low Reverse Recovery Charge, Qrr • 100% UIL Tested • RoHS Compliant Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter DATA SHEET www.onsemi.com VDS rDS(ON) MAX ID MAX 100 V 2.