FDPF4D5N10C
Description
This N-Channel MV MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology. This Process has been Optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Key Features
- Max RDS(on) = 4.5 mW at VGS = 10 V, ID = 100 A
- Extremely Low Reverse Recovery Charge, Qrr
- 100% UIL Tested
- This Device is Pb-Free Halide, Free and RoHS compliant
