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FDPF4D5N10C - N-Channel MOSFET

Download the FDPF4D5N10C datasheet PDF. This datasheet also covers the FDP4D5N10C variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N

advanced PowerTrench process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance with best in class soft body diode.

Key Features

  • Max RDS(on) = 4.5 mW at VGS = 10 V, ID = 100 A.
  • Extremely Low Reverse Recovery Charge, Qrr.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free Halide, Free and RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDP4D5N10C-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FDPF4D5N10C N-Channel MOSFET INCHANGE

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com MOSFET – N-Channel, Shielded Gate POWERTRENCH) 100 V, 128 A, 4.5 mW GDS GDS FDP4D5N10C, FDPF4D5N10C Description This N−Channel MV MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology. This Process has been Optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode. TO−220 CASE 221A TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT D G Features • Max RDS(on) = 4.5 mW at VGS = 10 V, ID = 100 A • Extremely Low Reverse Recovery Charge, Qrr • 100% UIL Tested • This Device is Pb−Free Halide, Free and RoHS Compliant.