Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
150 V, 4.1 A, 66 mW
Features
- RDS(on) = 57 mW (Typ.), VGS = 10 V, ID = 4.1 A
- Qg(TOT) = 19 nC (Typ.), VGS = 10 V
- Low Miller Charge
- Low QRR Body Diode
- Optimized Efficiency at High Frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
- This Device is Pb- Free and Halide free
Applications
- DC/DC Converters and Off- Line UPS
- Distributed Power Architectures and VRMs
- Primary Switch for 24 V and 48 V Systems
- High Voltage Synchronous Rectifier
- Direct Injection / Diesel Injection Systems
- 42 V Automotive Load Control
- Electronic Valve Train Systems
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rati...
