FDS2582 Overview
MOSFET N-Channel, POWERTRENCH) 150 V, 4.1 A, 66 mW FDS2582.
FDS2582 Key Features
- RDS(on) = 57 mW (Typ.), VGS = 10 V, ID = 4.1 A
- Qg(TOT) = 19 nC (Typ.), VGS = 10 V
- Low Miller Charge
- Low QRR Body Diode
- Optimized Efficiency at High Frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
- This Device is Pb-Free and Halide free
