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FDS2582 - N-Channel MOSFET

Key Features

  • RDS(on) = 57 mW (Typ. ), VGS = 10 V, ID = 4.1 A.
  • Qg(TOT) = 19 nC (Typ. ), VGS = 10 V.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • Optimized Efficiency at High Frequencies.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • This Device is Pb.
  • Free and Halide free.

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Datasheet Details

Part number FDS2582
Manufacturer onsemi
File Size 367.05 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS2582 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 150 V, 4.1 A, 66 mW FDS2582 Features • RDS(on) = 57 mW (Typ.), VGS = 10 V, ID = 4.1 A • Qg(TOT) = 19 nC (Typ.