Datasheet Details
| Part number | FDS4435BZ-F085 |
|---|---|
| Manufacturer | onsemi |
| File Size | 352.37 KB |
| Description | P-Channel Power MOSFET |
| Datasheet | FDS4435BZ-F085-ONSemiconductor.pdf |
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Overview: FDS4435BZ-F085 P-Channel PowerTrench® MOSFET FDS4435BZ-F085 P-Channel PowerTrench® MOSFET -30V, -8.
| Part number | FDS4435BZ-F085 |
|---|---|
| Manufacturer | onsemi |
| File Size | 352.37 KB |
| Description | P-Channel Power MOSFET |
| Datasheet | FDS4435BZ-F085-ONSemiconductor.pdf |
|
|
|
This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
D D D D Pin 1 SO-8 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD EAS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25°C Power Dissipation Power Dissipation Single Pulse Avalanche Energy TA = 25°C TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) (Note 4) Ratings -30 ±25 -8.8 -50 2.5 1.0 24 -55 to +150 Units V V A W mJ °C RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 25 (Note 1a) 50 °C/W Device Marking FDS4435BZ Device FDS4435BZ-F085 Package SO-8 Reel Size 13’’ Tape Width 12mm Quantity 2500units ©2009 Semiconductor Components Industries, LLC.
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