FDS4435BZ-F085
Description
This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
Key Features
- Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A
- Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A
- Extended VGSS range (-25V) for battery applications
- HBM ESD protection level of ±3.8KV typical (note 3)
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- Termination is Lead-free and RoHS pliant Qualified to AEC Q101
