FDS4480 Datasheet | onsemi

Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. - 10.8 A, 40 V. RDS(ON) = 12 mΩ @ VGS = 10 V - Low gate charge (29 n C) - High performance trench technology for extremely low RDS(ON) Applications - DC/DC converter - High power and current handling capability DD DD DD DD SO-8 Pin 1 SO-8 SSSS SS GG Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1a) Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient...