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FDS4935A - Dual P-Channel MOSFET

General Description

This P

advanced POWERTRENCH process.

20 V).

Key Features

  • 7 A,.
  • 30 V. RDS(ON) = 23 mW @ VGS =.
  • 10 V RDS(ON) = 35 mW @ VGS =.
  • 4.5 V.
  • Low Gate Charge (15 nC Typical).
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • High Power and Current Handling Capability.
  • This is a Pb.
  • Free Device Features.
  • Power Management.
  • Load Switch.
  • Battery Protection.

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Datasheet Details

Part number FDS4935A
Manufacturer onsemi
File Size 239.99 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet FDS4935A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Dual, P-Channel, POWERTRENCH 30 V FDS4935A General Description This P−Channel MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V – 20 V). Features  −7 A, −30 V. RDS(ON) = 23 mW @ VGS = −10 V RDS(ON) = 35 mW @ VGS = −4.