FDS4935A
Overview
This P-Channel MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V - 20 V).
- -7 A, -30 V. RDS(ON) = 23 mW @ VGS = -10 V RDS(ON) = 35 mW @ VGS = -4.5 V
- Low Gate Charge (15 nC Typical)
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- This is a Pb-Free Device Features
- Power Management
- Load Switch
- Battery Protection
