FDS4935A Description
This P−Channel MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V 20 V).
FDS4935A Key Features
- 7 A, -30 V. RDS(ON) = 23 mW @ VGS = -10 V
- Low Gate Charge (15 nC Typical)
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- This is a Pb-Free Device
- Power Management
- Load Switch
- Battery Protection