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FDS4935A - Dual P-Channel MOSFET

Datasheet Summary

Description

This P

advanced POWERTRENCH process.

20 V).

Features

  • 7 A,.
  • 30 V. RDS(ON) = 23 mW @ VGS =.
  • 10 V RDS(ON) = 35 mW @ VGS =.
  • 4.5 V.
  • Low Gate Charge (15 nC Typical).
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • High Power and Current Handling Capability.
  • This is a Pb.
  • Free Device Features.
  • Power Management.
  • Load Switch.
  • Battery Protection.

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Datasheet preview – FDS4935A

Datasheet Details

Part number FDS4935A
Manufacturer ON Semiconductor
File Size 239.99 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet FDS4935A Datasheet
Additional preview pages of the FDS4935A datasheet.

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Full PDF Text Transcription

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MOSFET – Dual, P-Channel, POWERTRENCH 30 V FDS4935A General Description This P−Channel MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V – 20 V). Features  −7 A, −30 V. RDS(ON) = 23 mW @ VGS = −10 V RDS(ON) = 35 mW @ VGS = −4.
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