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MOSFET – N-Channel, POWERTRENCH)
20 V
FDS6574A
General Description This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
• 16 A, 20 V
♦ RDS(ON) = 6 mW @ VGS = 4.5 V ♦ RDS(ON) = 7 mW @ VGS = 2.5 V ♦ RDS(ON) = 9 mW @ VGS = 1.8 V
• Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(ON) • High Power and Current Handling Capability • This Device is Pb−Free and are RoHS Compliant
Applications
• DC/DC Converter
www.onsemi.com
VDSS 20 V
RDS(on) MAX 6 mW @ 4.5 V 7 mW @ 2.5 V 9 mW @ 1.