FDS6898AZ-F085
Key Features
- 9.4 A, 20 V RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 18 mΩ @ VGS = 2.5 V
- Low gate charge (16 nC typical)
- ESD protection diode (note
- These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
- Qualified to AEC Q101
