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FDS8978 - N-Channel MOSFET

General Description

This N

improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Key Features

  • rDS(on) = 18 mW, VGS = 10 V, ID = 7.5 A.
  • rDS(on) = 21 mW, VGS = 4.5 V, ID = 6.9 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • Low Gate Charge.
  • High Power and Current Handling Capability.
  • 100% Rg Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number FDS8978
Manufacturer onsemi
File Size 384.95 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS8978 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 30 V, 7.5 A, 18 mW FDS8978, FDS8978-F40 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features • rDS(on) = 18 mW, VGS = 10 V, ID = 7.5 A • rDS(on) = 21 mW, VGS = 4.5 V, ID = 6.