Datasheet Summary
30V P-Channel PowerTrench®® MOSFET
Features
General Description
- - 5.3 A,
- 30 V
RDS(ON) = 50 mΩ @ VGS =
- 10 V RDS(ON) = 80 mΩ @ VGS =
- 4.5 V
This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has
- Low gate charge been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V
- 25V).
- Fast switching speed
Applications
- Power management
- Load switch
- Battery protection
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
DD DD DD DD
SO-8
Pin 1SO-8 SS SS SS...
