FDS9926A - Dual N-Channel MOSFET

onsemi

General Description

These N

advanced POWERTRENCH process.

10 V).

Key Features

6.5 A, 20 V. RDS(ON) = 30 mW @ VGS = 4.5 V RDS(ON) = 43 mW @ VGS = 2.5 V.
Optimized for Use in Battery Protection Circuits.
Low Gate Charge.
This Device is Pb.
Free and Halide Free.

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FDS9926A dual n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDS9926A
Manufacturer	onsemi
File Size	232.02 KB
Description	Dual N-Channel MOSFET
Datasheet	FDS9926A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Dual, N-Channel, POWERTRENCH) 2.5 V Specified FDS9926A General Description These N−Channel 2.5 V specified MOSFETs use onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V – 10 V). Features • 6.5 A, 20 V. RDS(ON) = 30 mW @ VGS = 4.5 V RDS(ON) = 43 mW @ VGS = 2.5 V • Optimized for Use in Battery Protection Circuits • Low Gate Charge • This Device is Pb−Free and Halide Free Applications • Battery Protection • Load Switch • Power Management ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−Source Voltage 20 V VGSS Gate−Source Voltage ±10 V ID Drain Current Continuous (Note 1a) 6.