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FDT1600N10ALZ - N-Channel MOSFET

General Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on

state resistance and maintain superior switching performance.

Key Features

  • RDS(on) = 121 mW (Typ. ) @ VGS = 10 V, ID = 2.8 A.
  • RDS(on) = 156 mW (Typ. ) @ VGS = 5 V, ID = 1.8 A.
  • Low Gate Charge (Typ. 2.9 nC).
  • Low Crss (Typ. 2.04 pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • ESD Protection Level: HBM > 5.2 kV, MM > 400 V, CDM > 1.5 kV.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 100 V, 5.6 A, 160 mW FDT1600N10ALZ General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance and maintain superior switching performance. Features • RDS(on) = 121 mW (Typ.) @ VGS = 10 V, ID = 2.8 A • RDS(on) = 156 mW (Typ.) @ VGS = 5 V, ID = 1.8 A • Low Gate Charge (Typ. 2.9 nC) • Low Crss (Typ. 2.04 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • ESD Protection Level: HBM > 5.2 kV, MM > 400 V, CDM > 1.5 kV • RoHS Compliant Applications • Consumer Appliances • LED TV and Monitor • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter DATA SHEET www.onsemi.