Description
This N
Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been tailored to minimize the on
state resistance and maintain superior switching performance.
Features
- RDS(on) = 121 mW (Typ. ) @ VGS = 10 V, ID = 2.8 A.
- RDS(on) = 156 mW (Typ. ) @ VGS = 5 V, ID = 1.8 A.
- Low Gate Charge (Typ. 2.9 nC).
- Low Crss (Typ. 2.04 pF).
- Fast Switching.
- 100% Avalanche Tested.
- Improved dv/dt Capability.
- ESD Protection Level: HBM > 5.2 kV, MM > 400 V, CDM > 1.5 kV.
- RoHS Compliant.
FDT1600N10ALZ Datasheet
