FDT1600N10ALZ
Description
This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been tailored to minimize the on- state resistance and maintain superior switching performance.
Features
- RDS(on) = 121 m W (Typ.) @ VGS = 10 V, ID = 2.8 A
- RDS(on) = 156 m W (Typ.) @ VGS = 5 V, ID = 1.8 A
- Low Gate Charge (Typ. 2.9 n C)
- Low Crss (Typ. 2.04 p F)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
- ESD Protection Level: HBM > 5.2 k V, MM > 400 V, CDM > 1.5 k V
- Ro HS pliant
Applications
- Consumer Appliances
- LED TV and Monitor
- Synchronous Rectification
- Uninterruptible Power Supply
- Micro Solar Inverter
DATA SHEET .onsemi.
S D G SOT- 223 CASE 318H
MARKING DIAGRAM
AYW 10ALZG
= Assembly Location
= Year
= Work Week
10ALZ = Specific Device Code
= Pb- Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT D
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of this data...
