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FDT4N50NZU - N-Channel MOSFET

General Description

MOSFET family based on advanced planar stripe and DMOS technology.

state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy streng

Key Features

  • Typ. RDS(on) = 2.42 W.
  • Ultra Low Gate Charge (Typ. Qg = 9.1 nC).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

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MOSFET - Power, N-Channel, UniFETt II, Ultra FRFETt 500 V, 2 A, 3 W FDT4N50NZU Description UniFET II MOSFET is ON Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on−state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate−source ESD diode allows UniFET II MOSFET to withstand over 2 kV HBM surge stress. UniFET II Ultra FRFET MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50 nsec and the reverse dv/dt immunity is 20 V/nsec while normal planar MOSFETs have over 200 nsec and 4.5 V/nsec respectively.