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FDT86113LZ - N-Channel MOSFET

General Description

This N Channel logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on

state resistance and yet maintain superior switching performance.

S zener has been added to enhance ESD voltage level.

Key Features

  • Max rDS(on) = 100 mW at VGS = 10 V, ID = 3.3 A.
  • Max rDS(on) = 145 mW at VGS = 4.5 V, ID = 2.7 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • HBM ESD Protection Level > 3 kV Typical (Note 4).
  • 100% UIL Tested.
  • This Device is Pb.
  • Free and Halide Free.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 100 V, 3.3 A, 100 mW FDT86113LZ General Description This N−Channel logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on−state resistance and yet maintain superior switching performance. G−S zener has been added to enhance ESD voltage level. Features • Max rDS(on) = 100 mW at VGS = 10 V, ID = 3.3 A • Max rDS(on) = 145 mW at VGS = 4.5 V, ID = 2.