FDT86113LZ
Description
This N- Channel logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on- state resistance and yet maintain superior switching performance. G- S zener has been added to enhance ESD voltage level.
Features
- Max r DS(on) = 100 m W at VGS = 10 V, ID = 3.3 A
- Max r DS(on) = 145 m W at VGS = 4.5 V, ID = 2.7 A
- High Performance Trench Technology for Extremely Low r DS(on)
- High Power and Current Handling Capability in a Widely Used
Surface Mount Package
- HBM ESD Protection Level > 3 k V Typical (Note 4)
- 100% UIL Tested
- This Device is Pb- Free and Halide Free
Applications
- DC
- DC Switch
Specifications
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current
- Continuous
- Pulsed
±20
EAS PD
TJ, TSTG
Single Pulse Avalanche Energy (Note 3)
Power Dissipation TA = 25°C (Note 1a)...
