FDV301N-F169 Datasheet N-channel Digital Fet

Manufacturer: onsemi

Overview: Digital FET, N-Channel FDV301N, FDV301N-F169 General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

This N−Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on−state resistance.

This device has been designed especially for low voltage applications as a replacement for digital transistors.

25 V, 0.22 A Continuous, 0.5 A Peak.
RDS(on) = 5 W @ VGS = 2.7 V.
RDS(on) = 4 W @ VGS = 4.5 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V.
Replace Multiple NPN Digital Transistors with One DMOS FET.
This Device is Pb.
Free and Halide Free Vcc D OUT IN G S GND Figure 1. Inverter.