FDV304P-F169 Datasheet P-channel Digital Fet

Manufacturer: onsemi

Overview: Digital FET, P-Channel FDV304P, FDV304P-F169 General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

This P−Channel enhancement mode field effect transistors is produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize on−state resistance at low gate drive conditions.

This device is designed especially for application in battery power applications such as notebook puters and cellular phones.

25 V,.
0.46 A Continuous,.
1.5 A Peak.
RDS(on) = 1.1 W @ VGS =.
4.5 V.
RDS(on) = 1.5 W @ VGS =.
2.7 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V.
Gate.
Source Zener for ESD Ruggedness. > 6 kV Human Body Model.
Compact Industry Standard SOT.
23 Surface Mount Package.
This Device is Pb.
Free and Halide Free.