FDV304P-F169 Overview
This P−Channel enhancement mode field effect transistors is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on−state resistance at low gate drive conditions. This device is designed especially for application in battery power
FDV304P-F169 Key Features
- 25 V, -0.46 A Continuous, -1.5 A Peak
- RDS(on) = 1.1 W @ VGS = -4.5 V - RDS(on) = 1.5 W @ VGS = -2.7 V
- Very Low Level Gate Drive Requirements Allowing Direct
- Gate-Source Zener for ESD Ruggedness. > 6 kV Human Body
- pact Industry Standard SOT-23 Surface Mount Package - This Device is Pb-Free and Halide Free
FDV304P-F169 Applications
- 25 V, -0.46 A Continuous, -1.5 A Peak
- RDS(on) = 1.1 W @ VGS = -4.5 V - RDS(on) = 1.5 W @ VGS = -2.7 V
- Very Low Level Gate Drive Requirements Allowing Direct
- Gate-Source Zener for ESD Ruggedness. > 6 kV Human Body
- pact Industry Standard SOT-23 Surface Mount Package - This Device is Pb-Free and Halide Free