FDWS9511L-F085 Datasheet | onsemi

DATA SHEET .onsemi. MOSFET - Power, Single P-Chanel -40 V, -30 A, 20.5 m W Features - Small Footprint (5x6 mm) for pact Design - Low RDS(on) to Minimize Conduction Losses - Low QG and Capacitance to Minimize Driver Losses - Wettable Flank Option for Enhanced Optical Inspection - AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage VDSS - 40 Gate- to- Source Voltage ±20 Continuous Drain Current Rq JC (Notes 1, 3) Steady TC = 25°C State TC = 100°C - 30 - 30 Power Dissipation Rq JC (Note 1) TC = 25°C TC = 100°C 68.2 W 34.1 Continuous Drain Current Rq JA (Notes 1, 2,...