FFSH20120A-F085
Description
Silicon Carbide (SiC) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon.
Key Features
- Max Junction Temperature 175°C
- Avalanche Rated 210 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery/No Forward Recovery
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS pliant
Applications
- Automotive HEV-EV DC-DC Converters
