FFSH5065B-F085
Description
Silicon Carbide (Si C) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Features
- Max Junction Temperature 175°C
- Avalanche Rated 225 m J
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery/No Forward Recovery
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant
Applications
- Automotive HEV- EV Onboard Chargers
- Automotive HEV- EV DC- DC Converters
DATA SHEET .onsemi.
TO- 247- 2LD CASE 340DA
1. Cathode
2. Anode
Schottky Diode
MARKING DIAGRAM
AYWWKK FFSH...
