FGA25N120ANTDTU-F109 Datasheet Npt Trench IGBT

Manufacturer: onsemi

Overview: FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	FGA25N120ANTDTU-F109
Manufacturer	onsemi
File Size	1.34 MB
Description	NPT Trench IGBT
Datasheet	FGA25N120ANTDTU-F109 FGA25N120 Datasheet (PDF)

General Description

Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

This device is well suited for the reso-nant or soft switching application such as induction heating, microwave oven.

C GCE TO-3P Absolute Maximum Ratings Symbol Description VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25°C @ TC = 100°C Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current @ TC = 25°C @ TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25°C @ TC = 100°C Storage Temperature Range Maximum Lead Temp.

Key Features

NPT Trench Technology, Positive Temperature Coefficient.
Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C.
Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C.
Extremely Enhanced Avalanche Capability.

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