FGA25N120ANTDTU-F109 Description
Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the reso-nant or soft switching application such as induction heating, microwave oven. C GCE TO-3P Ratings Symbol Description VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL...
FGA25N120ANTDTU-F109 Key Features
- NPT Trench Technology, Positive Temperature Coefficient
- Low Saturation Voltage: VCE(sat), typ = 2.0 V
- Low Switching Loss: Eoff, typ = 0.96 mJ
- Extremely Enhanced Avalanche Capability