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FGA25S125P Datasheet 25a Shorted-anode IGBT

Manufacturer: onsemi

Overview: FGA25S125P — 1250 V, 25 A Shorted-anode IGBT FGA25S125P 1250 V, 25 A Shorted-anode.

General Description

Using advanced field stop trench and shorted-anode technology, ON Semiconductor's shorted-anode trench IGBTs offer superior con-duction and switching performances for soft switching applications.

The device can operate in parallel configuration with exceptional avalanche capability .

This device is designed for induction heating and microwave oven.

Key Features

  • High Speed Switching.
  • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A.
  • High Input Impedance.
  • RoHS Compliant.

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