FGA25S125P - 25A Shorted-anode IGBT

onsemi

General Description

Using advanced field stop trench and shorted-anode technology, ON Semiconductor's shorted-anode trench IGBTs offer superior con-duction and switching performances for soft switching applications.

The device can operate in parallel configuration with exceptional avalanche capability .

Key Features

High Speed Switching.
Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A.
High Input Impedance.
RoHS Compliant.

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FGA25S125P 25a shorted-anode igbt by onsemi - Datasheet Preview

Datasheet Details

Part number	FGA25S125P
Manufacturer	onsemi
File Size	627.78 KB
Description	25A Shorted-anode IGBT
Datasheet	FGA25S125P Datasheet

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Full PDF Text Transcription (Reference)

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FGA25S125P — 1250 V, 25 A Shorted-anode IGBT FGA25S125P 1250 V, 25 A Shorted-anode IGBT Features • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave Oven General Description Using advanced field stop trench and shorted-anode technology, ON Semiconductor's shorted-anode trench IGBTs offer superior con-duction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.