Datasheet Summary
- 1250 V, 25 A Shorted-anode IGBT
1250 V, 25 A Shorted-anode IGBT
Features
- High Speed Switching
- Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A
- High Input Impedance
- RoHS pliant
Applications
- Induction Heating, Microwave Oven
General Description
Using advanced field stop trench and shorted-anode technology, ON Semiconductor's shorted-anode trench IGBTs offer superior con-duction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.
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