FGB3040CS - N-Channel IGBT

Product Overview

ON Semiconductor

Part number	FGB3040CS
Manufacturer	ON Semiconductor
File Size	827.48 KB
Description	N-Channel IGBT
Datasheet	FGB3040CS Datasheet
Additional preview pages of the FGB3040CS datasheet.

The FGB3040CS is an lgnition IGBT that offers outstanding SCIS capability along with a ratiometric emitter current sensing capability.

This sensing is based on a emitter active area ratio of 200:1.

The output is provided through a fourth (sense) lead.

SCIS Energy = 300mJ at TJ = 25oC.
Logic Level Gate Drive.
Qualified to AEC Q101.
RoHS Compliant Package Symbol Device Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 2mA) BVECS Emitter to Collector Breakdown Voltage (IC = 1mA) (Reverse Battery Condition) ESCIS25 Self Clamping Inductive Switching Energy (at starting TJ = 25°C) ESCIS150 Self Clamping Inductive Switching Energy (at sta.

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Published: Apr 1, 2020 |