Datasheet4U Logo Datasheet4U.com

FGB3040G2-F085C - N-Channel IGBT

Key Features

  • SCIS Energy = 300 mJ at TJ = 25°C.
  • Logic Level Gate Drive.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FGB3040G2_F085 N-Channel Ignition IGBT Fairchild Semiconductor
FGB3040CS N-Channel Ignition IGBT Fairchild Semiconductor
FGB30N6S2 600V/ SMPS II Series N-Channel IGBT Fairchild Semiconductor
FGB30N6S2D 600V/ SMPS II Series N-Channel IGBT Fairchild Semiconductor
FGB3236_F085 N-Channel Ignition IGBT Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FGB3040G2-F085 N-Channel IGBT
FGB3040CS N-Channel IGBT
FGB3056-F085 N-Channel IGBT
FGB3236-F085 IGBT
FGB3245G2-F085 N-Channel IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FGD3040G2-F085C FGB3040G2-F085C EcoSPARK) 2 Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 400 V BVECS Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) 28 V ESCIS25 ESCIS150 IC25 IC110 VGEM PD TJ, TSTG ISCIS = 14.2 A, L = 3.0 mHy, RGE = 1 KW, TC = 25°C (Note 1) ISCIS = 10.8 A, L = 3.