FGD2040G3-F085 - IGBT

onsemi

Key Features

SCIS Energy = 200 mJ at TJ = 25°C.
Low Saturation Voltage.
Logic Level Gate Drive.
AEC.
Q101 Qualified and PPAP Capable.
RoHS Compliant.

FGD2040G3-F085 igbt by onsemi - Datasheet Preview

Datasheet Details

Part number	FGD2040G3-F085
Manufacturer	onsemi
File Size	125.07 KB
Description	IGBT
Datasheet	FGD2040G3-F085 Datasheet

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Full PDF Text Transcription (Reference)

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EcoSPARK) 3 Ignition IGBT 200 mJ, 400 V, N-Channel Ignition IGBT Product Preview FGD2040G3-F085 Features • SCIS Energy = 200 mJ at TJ = 25°C • Low Saturation Voltage • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Applications MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Parameter Value Units BVCER BVECS ESCIS25 ESCIS150 IC25 IC110 VGEM PD TJ, TSTG Collector−to−Emitter Breakdown Voltage (IC = 1 mA) Emitter−to−Collector Voltage − Reverse Battery Condition (IC = 10 mA) ISCIS = 11.5 A, L = 3.0 mHy, RGE = 1 KW, TC = 25°C (Note 1) ISCIS = 9.1 A, L = 3.0 mHy, RGE = 1 KW, TC = 150°C (Note 2) Collector Current Continuous at VGE = 5.