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FGD3325G2-F085 - N-Channel Ignition IGBT

Features

  • SCIS Energy = 330mJ at TJ = 25oC.
  • Logic Level Gate Drive.
  • Qualified to AEC Q101.
  • RoHS Compliant.

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Datasheet preview – FGD3325G2-F085

Datasheet Details

Part number FGD3325G2-F085
Manufacturer ON Semiconductor
File Size 614.83 KB
Description N-Channel Ignition IGBT
Datasheet download datasheet FGD3325G2-F085 Datasheet
Additional preview pages of the FGD3325G2-F085 datasheet.

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Full PDF Text Transcription

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FGD3325G2-F085 EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT FGD3325G2-F085 EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT Features „ SCIS Energy = 330mJ at TJ = 25oC „ Logic Level Gate Drive „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automotive lgnition Coil Driver Circuits „ Coil On Plug Applications Package GATE EMITTER COLLECTOR JEDEC TO-252 D-Pak @2015 Semiconductor Components Industries, LLC. August-2017, Rev. 2 Publication Order Number: FGD3325G2-F085/D FGD3325G2-F085 EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) ESCIS25 ISCIS = 14.8A, L = 3.
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