FGD3440G2-F085V - N-Channel IGBT

onsemi

Key Features

SCIS Energy = 335 mJ at TJ = 25°C.
Logic Level Gate Drive.
AEC.
Q101 Qualified and PPAP Capable.
These Devices are Pb.
Free and are RoHS Compliant.

FGD3440G2-F085V n-channel igbt by onsemi - Datasheet Preview

Datasheet Details

Part number	FGD3440G2-F085V
Manufacturer	onsemi
File Size	0.98 MB
Description	N-Channel IGBT
Datasheet	FGD3440G2-F085V Datasheet

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Full PDF Text Transcription (Reference)

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EcoSPARK) 2 N-Channel Ignition IGBT 335 mJ, 400 V FGD3440G2-F085V Features • SCIS Energy = 335 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 400 V BVECS Emitter to Collector Voltage − Reverse 28 V Battery Condition (IC = 10 mA) ESCIS25 Self Clamping Inductive Switching Energy (Note 1) 335 mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 195 mJ IC25 IC110 VGEM PD TJ Collector Current Continuous at VGE = 4.